Thermal fluctuations in the electric conductivity of YBa2Cu3O7 - delta superconducting thin films grown on Sr2YSbO6 novel substrate materials in the film form were experimentally studied. YBa2Cu3O7 - delta films were grown by using a dc-technique on Sr2YSbO6 substrates, which were produced by rf magnetron sputtering. X-ray diffraction analysis evidenced that the Sr2YSbO6 films grow on conventional SrTiO3 substrates in a preferential orientation along the (100) planes direction with lattice parameter a=4,43() Å. The YBa2Cu3O7 - delta thin films, grown on Sr2YSbO6 films, exhibit an oriented growth in the (001) crystallographic direction, with lattice constant c=11,65(9) Å. Morphological characterizations were performed by means atomic force microscopy. Experiments of electrical resistivity show that the YBa2Cu3O7 - delta films present a normal-superconducting transition with critical temperature Tc=82,33 K. Fluctuation analysis for the YBa2Cu3O7 - delta thin films were performed by utilizing the concept of logarithmic derivative of the conductivity excess. Above the critical temperature Tc we experimentally determine the occurrence of Gaussian 3D, 2D and fractal fluctuation regimes. A genuinely critical region identified by the exponent lambdaCR=0,35 were obtained close to Tc. This critical regime is effectively described by the 3D-XY model.

We report several ab initio calculations performed over the A2FeMoO6 (A=Ba, Ca) double perovskite. Results show that it is an insulator for the spin up orientation and conductor for the other one. We investigate the electronic structure of A2FeMoO6 by means calculations of density of states for both spin orientations, based on the Density Functional Theory and the Linearized Augmented Plane Waves method. For the exchange correlation potential we chose the Generalized Gradient Approximation since this potential consider the difference between the electronic densities for the two distinct spin orientations from the beginning. The density of states is calculated by the histogram method and the position of the Fermi level is found by integrating over the density of states for both spin orientations. With the calculated densities of states, the half metallic properties of these compounds can be observed with the position of the Fermi level. Our results are in agreement of the Sarma's methodology, who considers a new mechanism for the magnetic interactions responsible for the magnetism on the A2FeMoO6 family. We also calculate the cell dimensions that minimize the total energy for each configuration using the Murnaghan equation state.